Advantages
- Enables magnetic-field-based tuning of MEMS resonance frequency and amplitude
- Supports non-contact actuation using external AC or DC magnetic fields
- Improves post-CMOS compatibility using magnetostrictive structural materials
- Enables multifunctional MEMS devices for sensing, tuning, and energy applications
Summary
Conventional MEMS resonators face limitations in frequency tunability, post-CMOS integration, and multifunctionality. Electrical-only actuation restricts adaptability, while thermal budget constraints complicate backend integration. Existing designs struggle to support magnetic field sensing or dynamic frequency control without adding complexity, limiting their use in advanced RF, sensing, and adaptive microsystem applications.
This technology introduces magnetically induced strain as a new driving and sensing mechanism for MEMS resonators. By leveraging magnetostrictive structural layers, resonant frequency and amplitude can be dynamically tuned using external magnetic fields. The approach enables non-contact actuation, improved CMOS compatibility, and expanded functionality for tunable resonators, magnetic field sensors, and energy-aware MEMS systems.
Conceptual schematic illustrating magnetic-field-based driving and sensing in MEMS resonators.
Desired Partnerships
- License
- Sponsored Research
- Co-Development