Advantages:
- Achieves atomic scale manufacturing precision beyond the limits of conventional lithography techniques
- Offers a scalable, template free process compatible with many layered materials
- Enables repeated patterning across multiple layers to build complex three-dimensional structures
- Supports development of advanced nanoelectronics, quantum computing devices, and precision filtration membranes
Summary:
Next generation nanoelectronics, quantum computing devices, and molecular filtration membranes demand manufacturing precision at the atomic and angstrom scale. Yet conventional lithography and etching are held back by optical diffraction limits and costly, inflexible templating processes. These methods risk damaging delicate two-dimensional layered material interfaces, leaving no scalable, template free way to achieve precise atomic scale modification for ultra miniaturized devices.
This technology uses engineered Moire interference patterns, created by stacking materials like graphene with precise rotational or translational misalignment, to form periodic superlattices with distinct reactive sites. These sites enable highly selective addition or removal of material, producing atomic scale apertures or structures without templates or masks. Because the patterns can be designed in silico by controlling lattice mismatch and rotation, the process delivers deterministic, repeatable precision across multi-layer stacks, enabling scalable, complex three-dimensional atomic architectures beyond conventional methods.
This image shows how Angstrom-precise pore arrays are formed in 2D layered materials by combining rotational misalignment, selective functionalization, and plasma etching. The resulting moire-guided process enables precise, scalable nano-patterning at the atomic level.
Desired Partnerships
- License
- Sponsored Research
- Co-Development