Fundamental Understanding of Interfacial and Surface Incommensurabilities for Angstrom-Precise Advanced Manufacturing

Tech ID: 20A019

Advantages:

 

  • Enables scalable, atomic-level additive and subtractive manufacturing
  • Uses naturally occurring misalignments (incommensurabilities) to guide ultra-precise patterning
  • Supports inverse design using machine learning for targeted feature control
  • Opens pathways to advanced applications in quantum devices and molecular separation

Summary:

Advanced manufacturing at the atomic scale faces steep challenges existing top-down and bottom-up techniques cannot reliably produce Ångstrom-level precision over large areas. The resolution limits of lithography and the uncontrollable nature of self-assembly restrict the creation of nano-features needed for next-generation devices and materials. As miniaturization approaches fundamental limits, there's a pressing need for new strategies that turn material imperfections into tools for precision.

This technology introduces a novel approach to manufacturing using incommensurate stacking of two-dimensional layered materials (2DLMs) to form moire patterns engineered surface states that guide Ångstrom-precise additive and subtractive processes. By selectively modifying these patterned domains with chemical reactions or plasma etching, the method produces uniform nano-pores, nano-channels, and nano-islands across large areas. A machine learning framework supports inverse design, using experimental data to predict processing pathways for desired structures. The technology enables manufacturing of high-performance separation membranes, spin-based quantum devices, and next-gen biosensors addressing strategic needs in semiconductors, clean energy, and national security.

This image shows how Angstrom-precise pore arrays are formed in 2D layered materials by combining rotational misalignment, selective functionalization, and plasma etching. The resulting moire-guided process enables precise, scalable nano-patterning at the atomic level.

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